Author:

Chen, Ying-Chen  Search this

Lin, Chih-Yang  Search this

Huang, Hui-Chun  Search this

Kim, Sungjun  Search this

Fowler, Burt  Search this

Chang, Yao-Feng  Search this

Wu, Xiaohan  Search this

Xu, Gaobo  Search this

Chang, Ting-Chang  Search this

Lee, Jack C.  Search this

Object Type:

Smithsonian staff publication

Year:

2018

Citation:

Chen, Ying-Chen, Lin, Chih-Yang, Huang, Hui-Chun, Kim, Sungjun, Fowler, Burt, Chang, Yao-Feng, Wu, Xiaohan, Xu, Gaobo, Chang, Ting-Chang, and Lee, Jack C. 2018. "Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application." Journal of Physics D: Applied Physics, 51, (5) 055108. https://doi.org/10.1088/1361-6463/aaa1b9.

Identifier:

154760

DOI:

https://doi.org/10.1088/1361-6463/aaa1b9

ISSN:

0022-3727

Data source:

Smithsonian Libraries and Archives

EDAN-URL:

edanmdm:slasro_154760